| PART |
Description |
Maker |
| SFH4590 SFH4595 |
Schnelle GaAlAs-IR-Lumineszenzdiode High-Speed GaAlAs Infrared Emitter
From old datasheet system
|
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| OD-148-C |
HIGH-POWER GaAlAs IR EMITTER CHIPS
|
OptoDiode Corp
|
| OD-24X24-C |
HIGH-POWER GaAlAs EMITTER CHIPS
|
OptoDiode Corp
|
| OPE5985 |
High Speed GaAlAs Infrared Emitter
|
OPTEK Technologies
|
| Q68000-A8000 IRL81 IRL81A |
From old datasheet system
GaAlAs-Infrarot-Sendediode GaAlAs Infrared Emitter
ECONOLINE: RB & RA - Dual Output from a Single Input Rail- Power Sharing on Output- Industry Standard Pinout- 1kVDC & 2kVDC Isolation- Custom Solutions Available- UL94V-0 Package Material- Efficiency to 85% 发动 Infrarot - Sendediode GaAlA红外发射
|
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
|
| SFH480-1 |
GaAlAs INFRARED EMITTER
|
SIEMENS[Siemens Semiconductor Group]
|
| OD-880L |
HIGH-POWER GaAlAs IR EMITTERS
|
OptoDiode Corp
|
| MJE18004D2 MJE18004D2-D |
High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation ...
High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation Network POWER TRANSISTORS 5 AMPERES 1000 VOLTS 75 WATTS
|
ON Semiconductor
|
| OD663 |
HIGH-POWER GaAlAs IRLED ILLUMINATOR
|
OptoDiode Corp
|
| PDI-E808-A |
GaAlAs High power IR LED Emitters
|
Advanced Photonix, Inc.
|
| KEL-209A |
High-Power GaAlAs IRED Mounted
|
KODENSHI KOREA CORP.
Kondenshi Corp
|
